Title :
High rate, solution grown ZnO for a-Si:H based solar cells
Author :
Liu, F. ; Zhou, Y. ; Almutawalli, S. ; Banerjee, A. ; Yang, J. ; Guha, S.
Author_Institution :
United Solar Ovonic LLC, Troy, MI, USA
Abstract :
We have developed a solution-grown ZnO process, and scaled it up to roll-to-roll (RTR) pilot production. We have fabricated Ag/ZnO based back reflector on stainless steel web using the solution grown ZnO process. The process has been optimized to attain good device characteristics on thin film, amorphous silicon alloy (a-Si:H) based multijunction solar cells. The surface morphology and crystallographic structure of the ZnO films were investigated. We found that for our optimized film with ~2 μm thickness, the grain size is about 1 μm. While the as-deposited film shows random crystal orientation, we developed a post-deposition treatment that effectively transforms the randomly orientated film into <;00L>; preferred orientation, that provides the best solar cell performance. The performance of solar cells made with Ag/ZnO back reflectors prepared using the solution-grown ZnO films is similar to solar cells having Ag/ZnO back reflectors made with sputtered ZnO films.
Keywords :
II-VI semiconductors; amorphous semiconductors; elemental semiconductors; grain size; liquid phase deposition; semiconductor growth; semiconductor thin films; semiconductor-metal boundaries; silver; solar cells; surface morphology; wide band gap semiconductors; zinc compounds; Ag-ZnO; Si:H; a-Si:H-based solar cells; back reflector; crystallographic structure; post-deposition treatment; random crystal orientation; randomly orientated film; roll-to-roll pilot production; solution-grown ZnO process; sputtered ZnO films; stainless steel web; surface morphology; thin film amorphous silicon alloy-based multijunction solar cells; Films; Photovoltaic cells; Pollution measurement; Scanning electron microscopy; Substrates; X-ray scattering; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186586