DocumentCode
1872060
Title
Technology-Based Figure of Merit (FOM) for High Voltage LDMOSFETs - Proof of Value of SOI in Power ICs
Author
Iqbal, M. Mohamed ; Udrea, F.
Author_Institution
Cambridge Univ., Cambridge
fYear
2007
fDate
1-4 Oct. 2007
Firstpage
57
Lastpage
58
Abstract
A new technology-based static FOM is introduced to demonstrate the superiority of SOI technology LDMOSFETs over the bulk technologies. The studied FOM also takes into account the thermal effect using the maximum junction temperature (125deg C) for the active silicon layer.
Keywords
elemental semiconductors; power MOSFET; power integrated circuits; semiconductor technology; silicon; silicon-on-insulator; SOI; Si - Interface; active silicon layer; high voltage LDMOSFET; lateral double diffused metal-oxide-semiconductor field effect transistor; maximum junction temperature; power IC; technology-based static figure of merit; thermal effect; Conference proceedings; Equations; Isolation technology; Leakage current; Numerical simulation; Power engineering and energy; Power integrated circuits; Power semiconductor devices; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2007 IEEE International
Conference_Location
Indian Wells, CA
ISSN
1078-621X
Print_ISBN
978-1-4244-0879-5
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2007.4357850
Filename
4357850
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