Title :
Technology-Based Figure of Merit (FOM) for High Voltage LDMOSFETs - Proof of Value of SOI in Power ICs
Author :
Iqbal, M. Mohamed ; Udrea, F.
Author_Institution :
Cambridge Univ., Cambridge
Abstract :
A new technology-based static FOM is introduced to demonstrate the superiority of SOI technology LDMOSFETs over the bulk technologies. The studied FOM also takes into account the thermal effect using the maximum junction temperature (125deg C) for the active silicon layer.
Keywords :
elemental semiconductors; power MOSFET; power integrated circuits; semiconductor technology; silicon; silicon-on-insulator; SOI; Si - Interface; active silicon layer; high voltage LDMOSFET; lateral double diffused metal-oxide-semiconductor field effect transistor; maximum junction temperature; power IC; technology-based static figure of merit; thermal effect; Conference proceedings; Equations; Isolation technology; Leakage current; Numerical simulation; Power engineering and energy; Power integrated circuits; Power semiconductor devices; Temperature; Voltage;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357850
