Title :
Gate-Controlled Bipolar Action in Ultrathin-Body Dynamic-Threshold SOI MOSFET
Author :
Omura, Y. ; Tochio, T.
Author_Institution :
Fac. of Sci. & Eng., Kansai Univ., Suita
Abstract :
This paper demonstrates some interesting attributes of an ultrathin DT-MOSFET that has a confined structure; the bipolar action is suppressed or enhanced by the gate following the mechanism of Lubistor operation. It is concluded that a DT-MOSFET suitable for low-power and low-noise circuit applications can be realised.
Keywords :
MOSFET; silicon-on-insulator; Lubistor operation; SiO2-Si; confined device structure; gate-controlled bipolar action; low-noise circuits; low-power circuits; ultrathin-body dynamic-threshold SOI MOSFET; Conference proceedings; Electrons; Low voltage; MOSFET circuits; Solids;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357853
