Title :
Low-Temperature Behavior Simulations of Phonon-Limited Electron Mobility for Sub-10-nm-Thick SOI MOSFET with (111) or (001) Si Surface Channel
Author :
Yamamura, Tsuyoshi ; Sato, Shingo ; Omura, Yasuhisa
Author_Institution :
Kansai Univ., Osaka
Abstract :
This paper describes the temperature behavior of the phonon-limited electron mobility on the (111) and (001) Si surfaces of DG SOI MOSFET. We discuss the major difference of the phonon-limited electron mobility behavior on the (111) and (001) Si surfaces of DG SOI MOSFET at low temperature.
Keywords :
MOSFET; electron mobility; silicon-on-insulator; (001) Si; (111) Si; DG SOI MOSFET; MOSFET; low-temperature behavior; phonon-limited electron mobility; silicon-on-insulator; surface channel; Acoustic scattering; Capacitive sensors; Conference proceedings; Doping; Electron mobility; Electron optics; MOSFET circuits; Optical scattering; Phonons; Temperature;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357854
