Title :
Microstructural influence of hydrogenated amorphous silicon on polycrystalline emitter solar cells prepared by top-down aluminum induced crystallization
Author :
Shumate, S.D. ; Hafeezuddin, M.K. ; Hutchings, Douglas A. ; Naseem, Hameed A.
Author_Institution :
Microelectron.-Photonics, Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
Top-down Aluminum Induced Crystallization (TAIC) is a variant of metal induced crystallization (MIC) in which aluminum and silicon layers do not exchange places. This study examines the influence of the quality of hydrogenated amorphous silicon, a-Si:H, on the resultant output of TAIC polycrystalline emitter solar cells by controlling the hydrogen content and bonding distribution during a-Si:H deposition. Surprisingly, it was found that device-quality a-Si:H was not the best precursor for TAIC as determined by solar cell output characteristics.
Keywords :
aluminium; amorphous semiconductors; crystallisation; elemental semiconductors; silicon; solar cells; Al; MIC; Si:H; TAIC polycrystalline emitter solar cells; bonding distribution; hydrogen content; hydrogenated amorphous silicon; metal-induced crystallization; microstructural influence; silicon layers; solar cell output characteristics; top-down aluminum-induced crystallization; Aluminum; Amorphous silicon; Crystallization; Films; Helium; Photovoltaic cells; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186594
