Title :
Effects of High Temperature Anneals and 60Co Gamma Ray Irradiation on Strained Silicon-on-Insulator (sSOI)
Author :
Park, K. ; Canonico, M. ; Celler, G.K. ; Seacrist, M. ; Chan, J. ; Gelpey, J. ; Holbert, K.E. ; Nakagawa, S. ; Tajima, M. ; Schroder, D.K.
Author_Institution :
Sch. of Mater., Arizona State Univ., Tempe, AZ
Abstract :
Strained silicon-on-insulator (sSOI) was exposed to high-temperature (1200-1350degC) annealing and high-dose 60Co gamma-ray irradiation (51.5 kGy) to study the tenacity of the bond between the strained Si film and the underlying buried oxide. All samples were characterized by UV Raman, pseudo-MOSFET (psi-MOSFET) current-voltage, Hall mobility, and photoluminescence (PL) to verify any change in strain. UV Raman, PL and psi-MOSFET measurements show no strain relaxation for the high temperature annealed samples and only very slight relaxation for the gamma-ray irradiated samples. In previous studies, the stability of the strain with thermal processing and nano-patterning was analyzed with optical or X-ray methods.
Keywords :
Hall mobility; MOSFET; Raman spectra; annealing; gamma-ray effects; high-temperature effects; photoluminescence; silicon-on-insulator; ultraviolet spectra; Hall mobility; SOI; SiO2-Si; UV Raman characterization; high-dose gamma-ray irradiation; high-temperature annealing; photoluminescence; pseudoMOSFET; radiation absorbed dose 51.5 kGy; strain relaxation; strained silicon film; strained silicon-on-insulator; temperature 1200 C to 1350 C; Annealing; Bonding; Capacitive sensors; Hall effect; Photoluminescence; Semiconductor films; Silicon on insulator technology; Stability analysis; Strain measurement; Temperature;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357856
