Author :
Zollner, Stefan ; Grudowski, Paul ; Thean, Aaron ; Jawarani, Dharmesh ; Karve, Gauri ; White, Ted ; Bolton, Scott ; Desjardins, Heather ; Chowdhury, Murshed ; Chang, Kyuhwan ; Jahanbani, Mo ; Noble, R. ; Lovejoy, L. ; Rossow, M. ; Denning, Dean ; Goedeke,
Abstract :
We demonstrate a dual silicide integration on a SOI CMOS platform with robust low-resistance PtSi PMOS contacts. Compared to NiSi, the specific contact resistivity is reduced in PtSi contacts to p-type Si and increased in contacts to n-type Si. PMOS linear and saturation drive current enhancements of 6% and 9%, respectively, were achieved with PtSi relative to baseline NiSi source/drain contacts.
Keywords :
CMOS integrated circuits; electrical contacts; nickel compounds; platinum compounds; silicon-on-insulator; NiSi; PtSi; contact resistivity; dual silicide SOI CMOS integration; low-resistance PMOS contacts; saturation drive current enhancement; source-drain contacts; Annealing; CMOS process; Contact resistance; Etching; Germanium silicon alloys; MOS devices; Resistors; Schottky barriers; Silicides; Silicon germanium;
