Title :
Diode-pumped Yb/sup 3+/:Sr/sub 5/(VO/sub 4/)/sub 3/F laser
Author :
Bustamante, A.N.P. ; Hammons, D.A. ; Peale, Robert E. ; Richardson, M. ; Chai, B.H.T. ; Chin, A. ; Cary, J.
Author_Institution :
Center for Res. & Educ. in Opt. & Lasers, Central Florida Univ., Orlando, FL, USA
Abstract :
Summary form only given. Recent publications show high slope efficiencies, high emission cross section, and low laser threshold for Yb/sup 3+/ in appatite host structures. We have developed a Czochralski technique for producing SVAP crystalline boules with up to 6% Yb (by weight in the starting melt). Contrary to common practice in growing oxyfluoride crystals, high oxidation in the growth atmosphere produces better quality SVAP single crystals. Large crystalline boules were grown without the tendency toward grain boundaries, cracks, or spiraling, suggesting that our method can make this host market-ready. Diode-pumped operation of Yb/sup 3+/:SVAP was achieved for the first time by generating emission at 906 nm from a new high brightness InGaAs/AlGaAs laser diode which overlapped well with the broad absorption at 905 nm.
Keywords :
crystal growth from melt; laser beams; optical fabrication; optical materials; optical pumping; solid lasers; strontium compounds; ytterbium; 1044 nm; 1117 nm; 905 nm; 906 nm; Czochralski technique; InGaAs-AlGaAs; Sr/sub 5/(VO/sub 4/)/sub 3/F:Yb; Yb/sup 3+/; Yb/sup 3+/:Sr/sub 5/(VO/sub 4/)/sub 3/F; appatite host structures; cracks; crystalline boules; diode-pumped laser; emission cross section; grain boundaries; growth atmosphere; laser threshold; oxyfluoride crystals; slope efficiencies; spiraling; Couplers; Diodes; Laser excitation; Microchip lasers; Optimized production technology; Power generation; Power lasers; Pump lasers; Strontium; Temperature;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834351
