DocumentCode :
1872529
Title :
Stacked Nanowires ΦFET with Independent Gates: A Novel Device for Ultra-dense Low-Power Applications
Author :
Dupre, C. ; Ernst, T. ; Arvet, C. ; Aussenac, F. ; Deleonibus, S. ; Ghibaudo, G.
Author_Institution :
CEA-LETI - Minatec, Grenoble
fYear :
2007
fDate :
1-4 Oct. 2007
Firstpage :
95
Lastpage :
96
Abstract :
Based on 3D numerical simulations and on a technological evaluation, we demonstrate the relevance of a new stacked nanowires architecture concept with independent gates, the PhiFET. We study the coupling effects in nanowires controlled by two independent gates. This architecture, proposed for low-power applications, reveals an excellent control of short-channel effects and improved ION/IOFF ratios compared to FinFET with the same designed width.
Keywords :
MOSFET; low-power electronics; nanoelectronics; nanowires; 3D numerical simulations; FinFET; MOSFET; independent gates; nanowires architecture; short-channel effects; stacked nanowires PhiFET; ultra-dense low-power applications; CMOS technology; Electrostatics; Equations; FinFETs; MOSFETs; Nanowires; Numerical simulation; OFETs; Space technology; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2007.4357869
Filename :
4357869
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1872529
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