DocumentCode
1872568
Title
Deep-Trench Process Technology for Three-Dimensionally Integrated SOI-Based Image Sensors
Author
Young, D.J. ; Knecht, J.M. ; Rathman, D.D. ; Warner, K. ; Yost, D.-R. ; Newcomb, K. ; Suntharalingam, V.
Author_Institution
Massachusetts Inst. of Technol., Lexington
fYear
2007
fDate
1-4 Oct. 2007
Firstpage
97
Lastpage
98
Abstract
Large arrays of scientific imaging devices are in demand for wide-field-of-view imaging systems. We present a deep-trench process technology that enables the fabrication of SOI-based, 3-D-integrated, 4-side-abuttable image sensor "tiles" that can be assembled into large-area focal plane arrays. We demonstrate low-leakage, functional devices with 13.4-mum spacing between tile edge and the first imaging pixel.
Keywords
focal planes; image sensors; photodiodes; sensor arrays; silicon-on-insulator; 3-D-integrated SOI-based image sensors; Si - Interface; deep-trench process technology; large-area focal plane arrays; low-leakage functional devices; photodiode pixel array; wide-field-of-view imaging systems; Circuits; Doping; Etching; Fabrication; Image sensors; Photodiodes; Pixel; Planarization; Silicon; Tiles;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2007 IEEE International
Conference_Location
Indian Wells, CA
ISSN
1078-621X
Print_ISBN
978-1-4244-0879-5
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2007.4357870
Filename
4357870
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