Title :
Analysis of Sensing margin in Silicon-On-ONO (SOONO) Device for the Capacitor-less RAM Applications
Author :
Yun, Eun Jung ; Song, Ho Ju ; Hong, Sung In ; Kim, Sung Hwan ; Choi, Yong Lack ; Bae, Hyun Jun ; Kim, Na Young ; Oh, Chang Woo ; Kim, Dong-Won ; Park, Donggun
Author_Institution :
R&D Center, Seoul
Abstract :
In this study, we compared sensing margin according to the back gate bias and body doping concentration. We achieved large sensing margin of 62 uA/um at LG = 87 run and demonstrated sensing margin of 45 uA/um with LG = 47 nm that is the smallest device ever reported for the floating body RAM. For the scaling down to the sub 50 nm gate length, we should reduce the body thickness for the SCE with optimum body doping condition . Possibility of scaling down with the capacitor-less RAM is shown to the sub 50 nm from this result.
Keywords :
integrated memory circuits; random-access storage; silicon-on-insulator; SOONO device; back gate bias; body doping concentration; capacitor-less RAM applications; floating body RAM; sensing margin; silicon-on-ONO device; Capacitors; Conference proceedings; Costs; Doping; Insulation; Random access memory; Read-write memory; Research and development; Silicon on insulator technology; Thickness control;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357873
