Novel Silicon-on-SiC Substrate with Superior Thermal and RF Performance

A novel Si-on-SiC hybrid substrate is demonstrated using MOSFET devices. This is the first demonstration ever of this technology, to the best knowledge of the authors. The direct bonded substrate uses polysilicon as an intermediate layer, thereby eluding the thermally unfavourable SiO₂. The MOSFET characteristics as well as the absence of self-heating effects are shown and are benchmarked against devices on commercially available epitaxial and SOI wafers, as well as Si-on-poly -SiC (SoPSiC, PicoGiga). Previous efforts to improve the thermal properties by replacing the SiO₂ insulator have included diamond, AIN, and Al₂O₃.