DocumentCode
1872819
Title
High Temperature Antenna Switches in 130 nm SOI Technology
Author
Emam, M. ; El Kaamouchi, M. ; Moussa, M. Si ; Raskin, J.P. ; Vanhoenacker-Janvier, D.
Author_Institution
Univ. Catholique de Louvain, Louvain-la-Neuve
fYear
2007
fDate
1-4 Oct. 2007
Firstpage
121
Lastpage
122
Abstract
This paper presents the design and the behavior vs. temperature of RF antenna switches in a 130 nm SOI technology. The design is implemented using two types of transistors; floating body and body tied transistors. It is shown that the floating body transistor is the best candidate for the design of RF antenna switches implemented in a fully integrated RF communication system. Outstanding high temperature behavior is also emphasized on a temperature range from 25degC to
Keywords
antenna accessories; nanoelectronics; semiconductor switches; silicon-on-insulator; RF antenna switches; RF communication system; SOI technology; high temperature antenna switches; size 130 nm; temperature 25 C to 200 C; CMOS technology; Communication switching; Conductivity; Insertion loss; MOSFETs; Propagation losses; Radio frequency; Silicon on insulator technology; Switches; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2007 IEEE International
Conference_Location
Indian Wells, CA
ISSN
1078-621X
Print_ISBN
978-1-4244-0879-5
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2007.4357882
Filename
4357882
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