DocumentCode :
1872999
Title :
Wide-Band Simulation and Characterization of Digital Substrate Noise in SOI Technology
Author :
Bol, David ; Ambroise, R. ; Roda Neve, C. ; Raskin, Jean-Pierre ; Flandre, Denis
Author_Institution :
Univ. Catholique de Louvain, Louvain-La-Neuve, Belgium
fYear :
2007
fDate :
1-4 Oct. 2007
Firstpage :
133
Lastpage :
134
Abstract :
The rising integration level of mixed-signal integrated circuits raises new issues for designers. Substrate noise generated by the switching digital part has a detrimental impact on the performance of the analog/RF parts. This contribution introduces simulation and experimental characterization of so-called "digital substrate noise" on a 0.13-μm SOI CMOS process with high resistivity (HR) substrate. To the authors knowledge, it is the first time that that it is addressed in SOI technology at circuit level.
Keywords :
CMOS integrated circuits; circuit simulation; digital integrated circuits; integrated circuit noise; mixed analogue-digital integrated circuits; silicon-on-insulator; CMOS process; SOI technology; analog/RF parts; digital substrate noise; high resistivity substrate; mixed-signal integrated circuits; wide-band simulation; CMOS process; CMOS technology; Circuit simulation; Conductivity; Integrated circuit noise; Integrated circuit technology; Mixed analog digital integrated circuits; Noise generators; Radio frequency; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
ISSN :
1078-621X
Print_ISBN :
978-1-4244-0879-5
Type :
conf
DOI :
10.1109/SOI.2007.4357888
Filename :
4357888
Link To Document :
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