Title :
Steam oxidation in Applied Materials´ RTP systems
Author :
Forstner, Hali J L ; Luscri, Anthony ; Ingle, Nitin ; Williams, Meredith ; Yuan, Zheng
Author_Institution :
Appl. Mater. Inc., Santa Clara, CA, USA
Abstract :
Rapid thermal processing with steam is proving to be an enabling technology for current and future device needs. Single-wafer RTP has numerous advantages, including reduced thermal budget and fast switching of chamber ambients. With the transition to 300 mm, single wafer thermal processing tools become critical for decreased production cycle time, as well as reduced work-in-process (WIP) inventory and scrapped wafer costs. Steam oxides also have significant advantages over dry oxides, including improved reliability, fewer defects, lower interfacial stresses, and faster growth rates. Coupled with the benefits of RTP, steam oxidation results in higher productivity and serves a wider range of potential applications. Applied Materials now offers rapid thermal processing with steam-containing ambients on its 200 mm and 300 mm platforms. An external catalytic steam generator is used in conjunction with the RTP chambers to provide additional process capabilities. This paper reviews production-worthy steam processes demonstrated on a 200 mm XEplus RTP chamber, including BPSG reflow and selective oxidation.
Keywords :
integrated circuit manufacture; oxidation; rapid thermal processing; steam; 200 mm; 200 mm platform; 300 mm; 300 mm platform; Applied Materials; B2O3-P2O5-SiO2; BPSG; BPSG reflow; XEplus RTP chamber; borophosphosilicate glass; contamination-free performance; external catalytic steam generator; process stability; production-worthy steam processes; rapid thermal processing; selective oxidation; single wafer thermal processing; single-wafer RTP; steam oxidation; steam oxides; steam-containing ambients; thermal budget reduction; Costs; Hydrogen; Manufacturing processes; Oxidation; Production; Productivity; Rapid thermal processing; Temperature; Thermal stresses; Water heating;
Conference_Titel :
Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001
Print_ISBN :
0-9638251-0-4
DOI :
10.1109/RTP.2001.1013752