Title :
A Ta/Mo Interdiffusion Gate Technology for Dual Metal Gate-First FinFET Fabrication
Author :
Matsukawa, T. ; Endo, K. ; Liu, Y.X. ; O´uchi, S. ; Ishikawa, Y. ; Yamauchi, H. ; Tsukada, J. ; Ishii, K. ; Masahara, M. ; Sakamoto, K. ; Suzuki, E.
Author_Institution :
AIST, Ibaraki
Abstract :
The Ta/Mo interdiffusion gate technology was introduced into the gate-first FinFET process. The Ta/Mo gated n-MOS and the Mo gated p-MOS FinFET exhibited symmetrical Vth (0.31/-0.36 V), and the scalability down to 100 nm was demonstrated.
Keywords :
MOSFET; chemical interdiffusion; molybdenum; semiconductor device manufacture; tantalum; Mo; Mo - Element; Ta; Ta - Element; dual metal; gate first FinFET fabrication; interdiffusion gate technology; n MOS; p MOS; scalability; Annealing; Capacitance-voltage characteristics; Degradation; Diffusion processes; Electron mobility; FETs; Fabrication; FinFETs; Scalability; Tin;
Conference_Titel :
SOI Conference, 2007 IEEE International
Conference_Location :
Indian Wells, CA
Print_ISBN :
978-1-4244-0879-5
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2007.4357893
