DocumentCode
1873187
Title
Athermal annealing of ion-implanted silicon
Author
Donnelly, D.W. ; Covington, B.C. ; Grun, J. ; Fischer, R.P. ; Peckerar, M. ; Felix, C.L. ; Djordjevic, B. Boro ; Mignogna, R. ; Meyer, J.R. ; Ting, A. ; Manka, C.K.
Author_Institution
Southwest Texas State Univ., San Marcos, TX, USA
fYear
2001
fDate
2001
Firstpage
133
Lastpage
144
Abstract
Phosphorus, arsenic, and boron dopants in neutron-transmutation-doped and ion-implanted silicon were electrically activated by a technique that does not involve the direct application of heat as in conventional thermal annealing or pulsed laser annealing. Dopants activated by this method exhibit much less diffusion than donors activated by standard thermal methods.
Keywords
annealing; arsenic; boron; diffusion; elemental semiconductors; ion implantation; neutron effects; phosphorus; semiconductor doping; silicon; Si:As; Si:B; Si:P; athermal annealing; dopant diffusion; electrical activation; ion implanted silicon; neutron transmutation doped silicon; Annealing; Boron; Conductivity; Infrared spectra; Optical pulses; Plasma applications; Plasma sources; Plasma temperature; Resistance heating; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Thermal Processing of Semiconductors 9th Internationa Conference on RTP 2001
Print_ISBN
0-9638251-0-4
Type
conf
DOI
10.1109/RTP.2001.1013757
Filename
1013757
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