DocumentCode
1873239
Title
A Very Sensitive Pressure Sensor on a SOI-on-Cavity Substrate
Author
Wu, A.M. ; Chen, J. ; Wang, X.
Author_Institution
Chinese Acad. of Sci., Shanghai
fYear
2007
fDate
1-4 Oct. 2007
Firstpage
151
Lastpage
152
Abstract
A new structure combining a beam-diaphragm structure and a SOI-on-cavity substrate was proposed in this paper. Both high sensitivity and good linearity could be achieved due to the stress concentrated structure.
Keywords
diaphragms; pressure sensors; silicon-on-insulator; SOI-on-cavity substrate; Si; Si - Surface; beam-diaphragm structure; linearity characteristics; pressure sensor; sensor sensitivity; stress concentrated structure; Actuators; Conference proceedings; Dielectric devices; Fabrication; Information technology; Linearity; Piezoresistive devices; Resistors; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2007 IEEE International
Conference_Location
Indian Wells, CA
ISSN
1078-621X
Print_ISBN
978-1-4244-0879-5
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2007.4357897
Filename
4357897
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