Effect of Ti interlayer on the growth of carbon nanotubes on Si by microwave-heated CVD

Author

Chuang, C.-C. ; Chen, Y.-S. ; Huang, J.H. ; Wong, Y.M. ; Kang, W.P.

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2004

fDate

11-16 July 2004

Firstpage

34

Lastpage

35

Abstract

In the CVD growth of carbon nanotubes (CNTs) on Si, a thin Ti layer is usually deposited prior to the deposition of catalyst to enhance the adhesion of CNTs to Si. In this study, the effect of Ti layer on the growth of CNTs on Si using different catalysts (palladium, nickel, cobalt) by microwave-heated CVD was systematically studied. The details of microstructure characterization and field emission measurement, and the growth of aligned CNTs of emission quality will be presented.

Keywords

adhesion; carbon nanotubes; catalysts; chemical vapour deposition; cobalt; crystal microstructure; field emission; nanotechnology; nickel; palladium; titanium; C; CNT alignment; Co; Ni; Pd; Si; Ti; Ti interlayer effect; adhesion; carbon nanotubes growth; catalysts; field emission measurement; microstructure characterization; microwave-heated CVD; Adhesives; Carbon nanotubes; Cobalt; Computer science; Materials science and technology; Microstructure; Nickel; Palladium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2004.1354885

Filename

1354885