Spike anneal qualification for 0.13 μm USJ technology on Radiance™ Centura®

This paper characterizes the performance of the Applied Materials 200 mm Radiance™ Centura for 0.13 μm ultra-shallow junction (USJ) applications. The Radiance spike anneal process is distinguished by fast ramp-up (250°C/sec) and cool-down rates (90°C/sec). Spike annealing prevents transient enhanced diffusion (TED) and out-diffusion effects of the implant dopant and thus enables good control over USJ formation. The Radiance USJ technology for advanced 0.13 μm devices succeeded in achieving a junction sheet resistance <400 ohm/cm² and depth <400Å on PMOS and <250Å on NMOS at 1E18/cm³ dopant concentration. The process performance with respect to device requirements and temperature control is presented.