Activation mechanism for Si-implanted layer on a GaAs substrate according to P-coimplantation method

Examined the possibility of improving the activation efficiency on the low-energy implantation layer in the GaAs. A reaction model was built up based on the 28Si+ implantation condition of 10keV/4E13cm-2 and 31P+ implantation condition of 40 keV/2E13cm-2. Then parameter fitting was carried out. It has been found out that activation energy is as low as 0.97 eV in the reaction of As vacancy capturing the P, and this reaction proceeds at a comparatively low temperature. As a result, it has been confirmed, that the effect of the P-coimplantation method is observed in the range of treatment without involving dissociation of complex defects such as FA. We employed the same model to conduct simulation, however, to examine the cases when the RTA method was used for the sample where Si was implanted at a low energy of about 10 keV. It has been revealed that the desired activation reaction is seriously deteriorated by P-coimplantation when subjected to the treatment at 940 °C or more, where the advantages of the RTA can be fully exhibited. Then a combination of this RTA and after-treating method was used for our test, but it has been shown that the result is still poorer than that in a simple RTA treatment. The results of these tentative calculations are verified by experiment.