Fabrication and characterization of gated carbon nanotube emitters in a trench structure

In the present paper, gated CNTs devices were fabricated via processes of (i) predefining a trench with thin SiO₂ spacer layer and Cr extractor layer on top to form a fine gated device structure by using traditional ultraviolet light lithography and selective etching techniques; (ii) locally depositing iron (Fe) catalyst on the bottom of the gated structure employing a self-aligned method; (iii) locally growing CNT emitter inside the gated structure by a thermal chemical vapor deposition (CVD) system. Field emission characteristics of the gated CNTs devices were studied in a high vacuum chamber. The corresponding F-N plot of the I-V curve in were calculated and the result showed a linear behavior, demonstrating that the current was generated by field electron emission.