Title :
The growth aspects of nanocrystalline diamond films and their effects on electron emissions
Author :
Subramanian, K. ; Kang, W.P. ; Davidson, J.L. ; Hofmeister, W.H.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
In this paper, aspects of the growth of nanocrystalline diamond films using CH4/H2/N2 microwave plasma chemical vapor deposition and their behavior as electron field emission cathode were reported. Nanocrystalline diamond films with "cauliflower-like" morphology were investigated for field emission in vacuum. The presence of more sp2-bonded non-diamond carbon content and a higher electrical conductivity of the film enhanced the field emission characteristics were observed, while a reduction in the grain size of the diamond had no similar effect. For field emission characterization, nanodiamond films were grown using methane flow rate varying between 2 seem and 15 seem, with electrical resistance from 10 Ω to hundreds of MΩ, and grain size in the range of 5 nm to 200 nm were employed.
Keywords :
diamond; electrical conductivity; electrical resistivity; electron field emission; grain size; nanostructured materials; plasma CVD; semiconductor thin films; 5 to 200 nm; C; cauliflower-like morphology; electrical conductivity; electrical resistance; electron field emission cathode; grain size; methane flow rate; microwave plasma chemical vapor deposition; nanocrystalline diamond films; sp2-bonded nondiamond carbon content; Carbon dioxide; Cathodes; Chemical vapor deposition; Conductive films; Conductivity; Diamond-like carbon; Electron emission; Grain size; Morphology; Plasma chemistry;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1354909
