Title :
Modeling and analysis of closed-loop gate drive
Author :
Chen, Lihua ; Ge, Baoming ; Peng, Fang Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
Abstract :
In this work, the closed-loop gate drive is modeled and mathematically analyzed. The simulated results show good agreement with experimental results. The reported analysis method and tool can provide guidelines for the closed-loop gate drive design in real applications. This work proposed a new mathematical method for IGBT switching transient behaviors modeling and gate drive control analysis. In the proposed method, equivalent circuits are developed according different power device operating conditions and circuit behaviors are mathematically described with state equations.
Keywords :
equivalent circuits; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; IGBT; closed-loop gate drive; equivalent circuits; gate drive control analysis; switching transient; Amplitude modulation; Circuit simulation; Circuit testing; Drives; Equations; Equivalent circuits; Insulated gate bipolar transistors; Mathematical model; Operational amplifiers; Voltage control;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2010 Twenty-Fifth Annual IEEE
Conference_Location :
Palm Springs, CA
Print_ISBN :
978-1-4244-4782-4
Electronic_ISBN :
1048-2334
DOI :
10.1109/APEC.2010.5433360
