Title :
Intrinsic ZnO nanowires with new sensing mechanism of sulfuration-desulfuration two-step reaction for high performance sensing to ppb-level H2S gas
Author :
Pengcheng Xu ; Haiyun Huang ; Dan Zheng ; Xinxin Li
Author_Institution :
State Key Lab. of Transducer Technol., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
Abstract :
The paper reports a novel H2S sensing-effect for intrinsic ZnO nanowires (NWs) chemiresistive sensor. Herein 50nm diameter ZnO-NWs are found and verified to be sulfurized by H2S to form ZnS that can be latterly desulfurized back to ZnO by ambient oxygen, which is different from conventional ZnO sensing-mechanism where resistance of semiconductor ZnO is changed via electron depletion-layer variation by surface adsorbed ambient oxygen. The ZnO-NWs have realized detection to 50ppb H2S.
Keywords :
II-VI semiconductors; gas sensors; hydrogen compounds; nanofabrication; nanosensors; nanowires; wide band gap semiconductors; zinc compounds; H2S; NW; ZnO; chemiresistive sensor; electron depletion-layer variation; gas sensor; intrinsic nanowire; size 50 nm; sulfuration-desulfuration two-step reaction; surface adsorbed ambient oxygen; Arrays; Gases; Resistance; Temperature sensors; Zinc oxide;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location :
Estoril
DOI :
10.1109/MEMSYS.2015.7051074
