DocumentCode :
1874261
Title :
Ultra-high electron emission efficiency from defect controlled polyimide tunnel cathode
Author :
Baba, Akiyoshi ; Yoshida, Tomoya ; Asano, Tanemasa
Author_Institution :
Center for Microelectron. Syst., Kyushu Inst. of Technol., Fukuoka, Japan
fYear :
2004
fDate :
11-16 July 2004
Firstpage :
104
Lastpage :
105
Abstract :
In this paper, the ultra-high efficiency (38%) field electron emission was demonstrated from the defect-control polyimide tunnel cathode using the dc-voltage forming method. It was found that the ion irradiation condition of the polyimide film and the dc-forming condition are important to obtain ultra-high electron emission efficiency from the cathode.
Keywords :
cathodes; electron field emission; ion beam effects; polymer films; dc-voltage forming method; defect controlled polyimide tunnel cathode; ion irradiation condition; polyimide film; ultrahigh electron emission efficiency; Anodes; Cathodes; Current measurement; Electron emission; Fabrication; Microelectronics; Polyimides; Scattering; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2004.1354921
Filename :
1354921
Link To Document :
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