DocumentCode
1874308
Title
Field emission of nanostructured boron nitride thin films in the presence of residual gases
Author
Encarnacio, P.A. ; Goldberg, Hannah R. ; Deline, Christopher A. ; Gilchrist, Brain E. ; Van Noord, Jonathan L. ; Clarke, Roy
Author_Institution
Dept. of Phys., Michigan Univ., Ann Arbor, MI, USA
fYear
2004
fDate
11-16 July 2004
Firstpage
108
Lastpage
109
Abstract
In this paper, field emission was measured in varying atmospheres of different gases, from an on-going study of thin films of polycrystalline boron nitride (BN). The initial results indicate that the nanostructured BN surface exhibit robust emission characteristics in the presence of residual gases such as oxygen, xenon, water vapor, and nitrogen. Also, no permanent effect on the emission characteristics was observed from the exposure of the films to the gas.
Keywords
boron compounds; field emission; nanostructured materials; semiconductor thin films; wide band gap semiconductors; BN; field emission; nanostructured boron nitride thin films; nitrogen; oxygen; polycrystalline boron nitride; residual gases; water vapor; xenon; Application software; Atomic force microscopy; Boron; Gases; Nanostructured materials; Nanostructures; Scanning electron microscopy; Sputtering; Surface morphology; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2004.1354923
Filename
1354923
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