In-situ second harmonic spectroscopic study of surface vs. bulk boron-doping of Si[001]

Author

Lim, D. ; Ekerdt, J.G. ; Downer, M.C.

Author_Institution

Sci. & Technol. Centre for Synthesis, Texas Univ., Austin, TX, USA

fYear

1999

fDate

28-28 May 1999

Firstpage

451

Abstract

Summary form only given. In-situ doping of semiconductor films by chemical vapor deposition (CVD) permits precise tailoring of dopant profiles with less surface damage than ion implantation. However, noninvasive in-situ monitors which are sensitive to dopant parameters are lacking. In this paper we show that second-harmonic (SH) spectroscopy provides a sensitive in-situ monitor of CVD boron-doping of Si[001]. The sensitivity originates from space charge fields associated with the electrically active dopants, which cause electric-field-induced second-harmonic (EFISH) generation, thus enhancing and spectrally altering SH signals.

Keywords

chemical vapour deposition; electro-optical effects; impurity absorption spectra; optical harmonic generation; semiconductor doping; sensitivity; silicon; space charge; CVD; CVD boron-doping; EFISH generation; Si; Si[001]; bulk boron-doping; chemical vapor deposition; dopant parameters; electric-field-induced second-harmonic generation; electrically active dopants; in-situ doping; in-situ second harmonic spectroscopic study; ion implantation; noninvasive in-situ monitors; precise doping profile tailoring; second-harmonic spectroscopy; semiconductor films; sensitivity; space charge fields; spectrally altering SH signals; surface damage; surface doping; Boron; Doping; Hydrogen; Interference; Polarization; Silicon; Solids; Space charge; Spectroscopy; Surface reconstruction;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834433

Filename

834433