Title :
Field electron emission through and from two-dimensional electron gas
Author :
Filip, V. ; Nicolaescu, D. ; Wong, H. ; Nagao, M. ; Chu, P.L.
Author_Institution :
Dept. of Electron. Eng. & Optoelectron. Res. Centre, Hong Kong Univ., Kowloon Tong, China
Abstract :
In this paper, the role of the semiconductor interface layer electrons in the field emission current is discussed by considering a simplified model of the semiconductor and vacuum interfaces. Also, the extent to which the quasi-bound states are populated during the field emission process is outlined in this study.
Keywords :
bound states; electron field emission; two-dimensional electron gas; field electron emission; field emission current; quasibound states; semiconductor interface layer electrons; semiconductor interfaces; two-dimensional electron gas; vacuum interfaces; Coatings; Electron emission; Electron sources; Iron; Optical devices; Optical filters; Potential energy; Quantization; Semiconductor materials; Silicon;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1354924
