Title :
1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors
Author :
Starck, C. ; Boucart, J. ; Plais, A. ; Bouche, N. ; Derouin, E. ; Pinquier, A. ; Gaborit, F. ; Bonnet-Gamard, J. ; Fortin, C. ; Goldstein, L. ; Brillouet, F. ; Salet, P. ; Carpentier, D. ; Martineau, M.-F. ; Jacquet, J.
Author_Institution :
Groupement d´Interet Econ., Marcoussis, France
Abstract :
Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.55 /spl mu/m laser sources. In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties.
Keywords :
III-V semiconductors; aluminium compounds; electrical conductivity; gallium arsenide; laser mirrors; laser modes; optimisation; semiconductor heterojunctions; semiconductor lasers; surface emitting lasers; thermal conductivity; 1 mW; 1.55 mum; 298 K; AlAs/GaAs n type metamorphic mirrors; CW lasers; GaAs-AlAs; GaAs/AlAs metamorphic mirrors; electrical characteristics; high power monolithic VCSELs; laser source; metamorphic AlAs/GaAs mirror; planar process; proton implantation; room temperature lasers; thermal characteristics; thermal properties; tunnel VCSEL; tunnel junction injection; ultra low cost fabrication; Doping; Electric resistance; Electric variables; Gallium arsenide; Mirrors; Protons; Temperature; Thermal conductivity; Thermal resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834437
