Title :
Electron emission properties of gated silicon field emitter arrays for charge neutralization device in ion implantation system
Author :
Gotoh, Y. ; Nakamura, K. ; Kojima, T. ; Tsuji, H. ; Ishikawa, J. ; Ikejiri, T. ; Umisedo, S. ; Sakai, S. ; Nagai, N.
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
The effect of the number of tips (4000 and 16000) and gate aperture (1.3 μm and 1.6 μm) on the energy distribution of a silicon field emitter array were investigated. Energy distribution of the emitted electrons was measured in ultrahigh vacuum using an electrostatic energy analyzer. Results showed that narrower gate aperture and less tip-numbers are necessary for narrower energy spread and smaller peak energy shift.
Keywords :
elemental semiconductors; field emitter arrays; silicon; 1.3 mum; 1.6 mum; Si; charge neutralization device; electron emission; electrostatic energy analyzer; energy distribution; gated silicon field emitter arrays; ion implantation system; peak energy shift; ultrahigh vacuum; Apertures; Electron emission; Energy measurement; Field emitter arrays; Ion beams; Ion implantation; Plasma measurements; Silicon; Space charge; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1354927
