Title :
High Q on-chip passive components for UTSi(R) CMOS technology
Author :
Megahed, M. ; Benton, R. ; Stuber, M. ; Lo, L. ; Burgener, M. ; Xiaolan Wu ; Canyon, J.
Author_Institution :
Peregrine Semicond. Corp., San Diego, CA, USA
Abstract :
UTSi (Ultra-Thin Silicon) on insulator technology shows the promise of full integration of digital, analog, RF, and RF matching circuitry on a single chip. It is based on standard VLSI technology. The process features excellent isolation due to the dielectric substrate, high RF performance transistors, and high quality passive elements. This paper presents the performance of the UTSi passive elements. Measurement data for resistors and capacitors are reported, as well as inductors with high Q.
Keywords :
CMOS integrated circuits; MOS capacitors; Q-factor; UHF integrated circuits; VLSI; inductors; integrated circuit technology; mixed analogue-digital integrated circuits; resistors; silicon-on-insulator; Si; UTSi CMOS technology; UTSi passive elements; capacitors; dielectric substrate; high Q on-chip passive components; inductors; resistors; standard VLSI technology; ultra-thin SOI technology; CMOS technology; Circuits; Dielectric measurements; Dielectric substrates; Dielectrics and electrical insulation; Isolation technology; Q measurement; Radio frequency; Silicon on insulator technology; Very large scale integration;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705109
