Title :
Excitation of intersubband transitions by THz pulses
Author :
Kersting, R. ; Bratschitsch, Rudolf ; Thaller, E. ; Strasser, G. ; Unterrainer, K. ; Heyman, J.N.
Author_Institution :
Inst. for Solid State Electron., Tech. Univ. of Vienna, Vienna, Austria
Abstract :
Summary form only given. When intersubband transitions are excited in semiconductor heterostructures, the charge carriers follow the driving field in an oscillatory motion. THz time-domain spectroscopy is an attractive tool to study the polarization following an exciting THz pulse. A time resolution which is shorter than the oscillation time of the driving field enables the observation of the coherent electron motion for the first time. The investigated GaAs/AlGaAs heterostructures are modulation doped parabolic quantum wells.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; infrared spectra; optical modulation; semiconductor heterojunctions; semiconductor quantum wells; time resolved spectra; GaAs-AlGaAs; GaAs/AlGaAs heterostructures; THz pulses; THz time-domain spectroscopy; charge carriers; coherent electron motion; driving field; exciting THz pulse; intersubband transitions; modulation doped parabolic quantum wells; oscillation time; oscillatory motion; parabolic quantum wells; polarization; semiconductor heterostructures; time resolution; Electric fields; Frequency; Josephson junctions; Microscopy; Physics; Resonance; Semiconductor materials; Semiconductor superlattices; Spectroscopy; Tunneling;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834449
