DocumentCode
1874725
Title
Smith-Purcell radiation using a single-tip field emitter
Author
Neo, Yoichiro ; Suzuki, Yousuke ; Sagae, Katsumi ; Shimawaki, Hidetaka ; Mimura, Hidenori
Author_Institution
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fYear
2004
fDate
11-16 July 2004
Firstpage
138
Lastpage
139
Abstract
Smith-Purcell radiation (SPR) was generated from a single-tip Si field emitter at a low power level. Single-tip Si field emitters were fabricated using reactive ion etching and thermal oxidation sharpening. Radiation measurements were performed through a viewing port in the visible spectra. SPR was successfully observed at 300-900 nm wavelength, 20-200 nA beam current and 25-30 kV accelerating voltage.
Keywords
field emitter arrays; oxidation; silicon; sputter etching; visible spectra; 20 to 200 nA; 25 to 30 kV; 300 to 900 nm; Si; Smith-Purcell radiation; reactive ion etching; single-tip field emitter; thermal oxidation sharpening; visible spectra; Acceleration; Apertures; Cathodes; Diffraction gratings; Electron beams; Laser beams; Millimeter wave technology; Pulse modulation; Surface waves; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2004.1354938
Filename
1354938
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