DocumentCode :
1875024
Title :
Identification of defect levels in CuxAg1−xInSe2 thin films via photoluminescence
Author :
Aquino, Angel R. ; Little, Scott A. ; Marsillac, Sylvain ; Collins, Rob ; Rockett, Angus
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Illinois, Urbana, IL, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Defect levels in polycrystalline thin films of CuxAg1-xInSe2 deposited with x=0, 0.6, and 1.0 have been studied via photoluminescence (PL) spectroscopy. Optical transitions were identified for the films. The type of defects involved and their position in the energy gap were determined from power- and temperature-dependent PL analysis. Donor-acceptor pair transitions were observed as well as transitions from either band tails or shallow hydrogenic states near the band edges. Significant subgap emission was observed between the near band edge and ~750 meV photon energies in all samples. An optimum Ag content was identified between 0.2 <; × <; 0.6.
Keywords :
copper compounds; indium compounds; photoluminescence; semiconductor thin films; silver compounds; solar cells; sputter deposition; CuAgInSe2; band edges; defect levels; donor acceptor pair transitions; energy gap; hydrogenic states; optical transitions; photoluminescence spectroscopy; photon energy; polycrystalline thin films; subgap emission; Computer aided instruction; Copper; Optical films; Photoluminescence; Photonic band gap; Photovoltaic cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186710
Filename :
6186710
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1875024
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