DocumentCode
1875100
Title
A silicon-on-silicon multichip module technology with integrated bipolar components in the substrate
Author
Day, Ray-Long ; Hruska, Christopher D. ; Tai, King L. ; Frye, Robert C. ; Lau, Maureen Y. ; Sullivan, Paul A.
Author_Institution
AT&T Bell Labs., Lee´´s Summit, MO, USA
fYear
1994
fDate
15-17 Mar 1994
Firstpage
64
Lastpage
67
Abstract
To address the needs of cost driven, mixed signal applications, we have developed a silicon-on-silicon technology that incorporates both passive and active devices in the module substrate. The technology combines a simple, double-diffused epitaxial bipolar technology with our thin-film MCMs. We describe the basic elements of the technology, typical active device properties and some examples of their use in a low-cost MCM
Keywords
bipolar integrated circuits; elemental semiconductors; mixed analogue-digital integrated circuits; multichip modules; silicon; MCM substrate design; Si-Si; Si-on-Si multichip module technology; active device properties; double-diffused epitaxial bipolar technology; full custom design ASIC; integrated bipolar components; mixed signal applications; passive devices; thin-film MCMs; Assembly; Bipolar integrated circuits; Bipolar transistors; Cities and towns; Costs; Multichip modules; Resistors; Silicon; Substrates; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Multi-Chip Module Conference, 1994. MCMC-94, Proceedings., 1994 IEEE
Conference_Location
Santa Cruz, CA
Print_ISBN
0-8186-5560-7
Type
conf
DOI
10.1109/MCMC.1994.292525
Filename
292525
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