DocumentCode
1875253
Title
Franz-Keldysh and avalanche effects in a germanium waveguide photodiode
Author
Takeda, Kenji ; Hiraki, Tatsurou ; Tsuchizawa, Tai ; Nishi, Hidetaka ; Rai Kou ; Fukuda, Hiroshi ; Ishikawa, Yozo ; Wada, Kazuyoshi ; Yamada, Koji
Author_Institution
NTT Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
fYear
2013
fDate
28-30 Aug. 2013
Firstpage
138
Lastpage
139
Abstract
At a high-voltage reverse bias, a germanium photodiode with a silicon waveguide exhibits responsivity of over 1 A/W in the entire C- and L-bands due to the Franz-Keldysh effect and avalanche multiplication.
Keywords
avalanche photodiodes; elemental semiconductors; germanium; optical waveguides; photodetectors; silicon; C-band; Franz-Keldysh effects; Ge-Si; L-band; avalanche effects; avalanche multiplication; germanium waveguide photodiode; high-voltage reverse bias; silicon waveguide; Absorption; Dark current; Germanium; L-band; Optical waveguides; Photodiodes; Silicon; Franz-Keldysh effect; Germanium photodiode; Si photonics; avalanche effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location
Seoul
ISSN
1949-2081
Print_ISBN
978-1-4673-5803-3
Type
conf
DOI
10.1109/Group4.2013.6644409
Filename
6644409
Link To Document