DocumentCode :
1875317
Title :
Dark current suppression for germanium metal-semiconductor-metal photodetector by plasma post-oxidation passivation
Author :
Jian Kang ; Rui Zhang ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
28-30 Aug. 2013
Firstpage :
140
Lastpage :
141
Abstract :
Effect of plasma post-oxidized GeOx passivation on dark current suppression has been investigated through Ge Schottky diodes and metal-semiconductor-metal photodetectors. Reduction of surface leakage current by approximately one order of magnitude is achieved.
Keywords :
Schottky diodes; elemental semiconductors; germanium; germanium compounds; leakage currents; metal-semiconductor-metal structures; oxidation; passivation; photodetectors; plasma materials processing; Ge-GeOx; Schottky diodes; dark current suppression; germanium metal-semiconductor-metal photodetector; plasma post-oxidation passivation; surface leakage current; Aluminum oxide; Dark current; Optical surface waves; Passivation; Plasmas; Radiation effects; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
ISSN :
1949-2081
Print_ISBN :
978-1-4673-5803-3
Type :
conf
DOI :
10.1109/Group4.2013.6644410
Filename :
6644410
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1875317
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