• DocumentCode
    1875317
  • Title

    Dark current suppression for germanium metal-semiconductor-metal photodetector by plasma post-oxidation passivation

  • Author

    Jian Kang ; Rui Zhang ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Univ. of Tokyo, Tokyo, Japan
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    140
  • Lastpage
    141
  • Abstract
    Effect of plasma post-oxidized GeOx passivation on dark current suppression has been investigated through Ge Schottky diodes and metal-semiconductor-metal photodetectors. Reduction of surface leakage current by approximately one order of magnitude is achieved.
  • Keywords
    Schottky diodes; elemental semiconductors; germanium; germanium compounds; leakage currents; metal-semiconductor-metal structures; oxidation; passivation; photodetectors; plasma materials processing; Ge-GeOx; Schottky diodes; dark current suppression; germanium metal-semiconductor-metal photodetector; plasma post-oxidation passivation; surface leakage current; Aluminum oxide; Dark current; Optical surface waves; Passivation; Plasmas; Radiation effects; Schottky diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644410
  • Filename
    6644410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1875317