Title :
Strained germanium nanostructures on silicon emitting at >2.2 µm wavelength
Author :
Velha, P. ; Dumas, Derek C. ; Gallacher, Kevin ; Millar, Ross ; Myronov, M. ; Leadley, D.R. ; Paul, Douglas J.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
The photoluminescence of process-induced tensile strained nanostructures fabricated using Ge on Si is reported. 100 nm pillars were etched and embedded in a silicon nitride thin film demonstrating photoluminescence emission up to ~2.5 μm.
Keywords :
elemental semiconductors; etching; germanium; nanostructured materials; photoluminescence; silicon compounds; thin films; Ge-Si3N4; Si; etching; photoluminescence emission; process-induced tensile strained germanium nanostructures; silicon nitride thin film; size 100 nm; Laser excitation; Optical device fabrication; Photonic band gap; Pump lasers; Silicon; Tensile strain;
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-5803-3
DOI :
10.1109/Group4.2013.6644411
