DocumentCode :
1875379
Title :
Theoretical analysis of bulk Ge-on-Si laser performance
Author :
Yan Cai ; Zhaohong Han ; Wei Yu ; Camacho-Aguilera, Rodolfo ; Kimerling, Lionel C. ; Michel, J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Massachusetts Inst. of Technol., Cambridge, MA, USA
fYear :
2013
fDate :
28-30 Aug. 2013
Firstpage :
144
Lastpage :
145
Abstract :
A modified gain modeling shows Ge has a wide gain bandwidth from 1550 nm to 1770 nm. Optimized laser structure predicts that Ge laser can achieve a lasing threshold of 2.2 kA/cm2.
Keywords :
elemental semiconductors; germanium; laser beams; laser theory; semiconductor lasers; silicon; Ge-Si; bulk Ge-on-Si laser performance; gain bandwidth; gain modeling; lasing threshold; optimized laser structure; wavelength 1550 nm to 1770 nm; Absorption; Free electron lasers; Laser modes; Laser theory; Pump lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
Conference_Location :
Seoul
ISSN :
1949-2081
Print_ISBN :
978-1-4673-5803-3
Type :
conf
DOI :
10.1109/Group4.2013.6644412
Filename :
6644412
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1875379
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