Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3

Author

Franco, Jacopo ; Alian, A. ; Kaczer, Ben ; Lin, Dongyang ; Ivanov, T. ; Pourghaderi, Ali ; Martens, K. ; Mols, Y. ; Zhou, Dizhi ; Waldron, Niamh ; Sioncke, S. ; Kauerauf, T. ; Collaert, Nadine ; Thean, A. ; Heyns, Marc ; Groeseneken, Guido

Author_Institution

Imec, Leuven, Belgium

fYear

2014

fDate

1-5 June 2014

Abstract

We present a comprehensive study of Positive Bias Temperature Instability (PBTI) in In_0.53Ga_0.47As devices with Al₂O₃ gate oxide, and with varying thickness of the channel quantum well. We show significant instability of the device electrical parameters induced by electron trapping into a wide distribution of defects in the high-k layer, with energy levels just above the InGaAs conduction band. A significant PBTI dependence on the channel thickness is found and ascribed to quantization effects. We argue that, in order to be relevant for production, the superior transport properties of III-V channels will need to be demonstrated with more stable high-k gate stacks.

Keywords

III-V semiconductors; aluminium compounds; conduction bands; electron traps; gallium arsenide; high-k dielectric thin films; indium compounds; integrated circuit reliability; quantum well devices; Al₂O₃; III-V channels; III-V devices; In_0.53Ga_0.47As; PBTI; channel quantum well; conduction band; defects; device electrical parameters; electron trapping; energy levels; high-k gate oxides; high-k layer; positive bias temperature instability; quantization effects; transport properties; Aluminum oxide; Indium gallium arsenide; Logic gates; MOS devices; Silicon; Stress; Voltage measurement; Bias Temperature Instability; III–V; InGaAs; Quantum Well; Reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861098

Filename

6861098