Title :
High-Rate Sputtering of Thick PZT Layers for MEMS Actuators
Author :
Jacobsen, H. ; Quenzer, H.-J. ; Wagner, B. ; Ortner, K. ; Jung, Th. ; Jung, Th.
Author_Institution :
Fraunhofer Institute for Silicon Technology ISIT, Itzehoe, GERMANY
Abstract :
Polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 3 µ m to 16 µ m were crack free deposited on silicon substrates in a high rate Gas Flow Sputtering process. Gas Flow Sputtering uses the hollow cathode effect which results into high deposition rates of about 200 nm/min to 250 nm/min.
Keywords :
Actuators; Argon; Cathodes; Fluid flow; Magnetic materials; Micromechanical devices; Semiconductor thin films; Silicon; Sputtering; Substrates;
Conference_Titel :
Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
Conference_Location :
Istanbul, Turkey
Print_ISBN :
0-7803-9475-5
DOI :
10.1109/MEMSYS.2006.1627774
