• DocumentCode
    1875568
  • Title

    High-Rate Sputtering of Thick PZT Layers for MEMS Actuators

  • Author

    Jacobsen, H. ; Quenzer, H.-J. ; Wagner, B. ; Ortner, K. ; Jung, Th. ; Jung, Th.

  • Author_Institution
    Fraunhofer Institute for Silicon Technology ISIT, Itzehoe, GERMANY
  • fYear
    2006
  • fDate
    2006
  • Firstpage
    214
  • Lastpage
    217
  • Abstract
    Polycrystalline Lead Zirconate Titanate (PZT) thin films in the range of 3 µ m to 16 µ m were crack free deposited on silicon substrates in a high rate Gas Flow Sputtering process. Gas Flow Sputtering uses the hollow cathode effect which results into high deposition rates of about 200 nm/min to 250 nm/min.
  • Keywords
    Actuators; Argon; Cathodes; Fluid flow; Magnetic materials; Micromechanical devices; Semiconductor thin films; Silicon; Sputtering; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
  • Conference_Location
    Istanbul, Turkey
  • ISSN
    1084-6999
  • Print_ISBN
    0-7803-9475-5
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2006.1627774
  • Filename
    1627774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1875568