• DocumentCode
    1875571
  • Title

    High efficiency wavelength conversion of 40 Gbps signals at 1550 nm in SOI nano-rib waveguides using p-i-n diodes

  • Author

    Gajda, Andrzej ; Da Ros, F. ; Vukovic, Dragana ; Zimmermann, L. ; Peucheret, Christophe ; Tillack, Bernd ; Peterman, K.

  • Author_Institution
    Inst. fur Hochfrequenz- und Halbleiter-Systemtechnologien, Tech. Univ. Berlin, Berlin, Germany
  • fYear
    2013
  • fDate
    28-30 Aug. 2013
  • Firstpage
    160
  • Lastpage
    161
  • Abstract
    We demonstrate enhancement of FWM wavelength conversion of a 40 Gbps signal in a reverse-biased p-i-n junction silicon waveguide. A conversion efficiency of -4.6 dB enables a conversion power penalty as low as 0.2 dB.
  • Keywords
    elemental semiconductors; integrated optics; integrated optoelectronics; nanophotonics; optical communication equipment; optical waveguides; optical wavelength conversion; p-i-n diodes; rib waveguides; silicon-on-insulator; FWM wavelength conversion; SOI nanorib waveguides; Si; bit rate 40 Gbit/s; conversion efficiency; conversion power penalty; high efficiency wavelength conversion; p-i-n diodes; reverse-biased p-i-n junction silicon waveguide; wavelength 1550 nm; Optical fiber amplifiers; Optical wavelength conversion; PIN photodiodes; Silicon; Waveguide junctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2013 IEEE 10th International Conference on
  • Conference_Location
    Seoul
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4673-5803-3
  • Type

    conf

  • DOI
    10.1109/Group4.2013.6644420
  • Filename
    6644420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1875571