Title :
Continuous wave operation of low confinement asymmetric structure diode lasers
Author :
Iordache, G. ; Buda, M. ; Acket, G.A. ; van der Roer, T.G. ; Kaufmann, L.M.F. ; Karouta, F. ; Jagadish, C. ; Tan, H.H.
Author_Institution :
Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
Abstract :
Summary form only given. High optical power from diode lasers can be obtained using low confinement structures. An asymmetric design makes this requirement easier and avoids the limitations related to the confinement layers thickness. Results of CW measurements on diode lasers having a new low loss, low confinement InGaAs/AlGaAs DQW asymmetric structure with "optical trap layer", grown by MOVPE are presented.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; CW measurements; InGaAs-AlGaAs; MOVPE growth; asymmetric design; confinement layers thickness; continuous wave operation; high optical power; low confinement asymmetric structure diode lasers; low confinement structures; low loss low confinement InGaAs/AlGaAs DQW asymmetric structure; optical trap layer; semiconductor; Absorption; Charge carrier processes; Communications technology; Diode lasers; Optical losses; Optical waveguides; Power generation; Power lasers; Voltage; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834485
