Continuous wave operation of low confinement asymmetric structure diode lasers

Author

Iordache, G. ; Buda, M. ; Acket, G.A. ; van der Roer, T.G. ; Kaufmann, L.M.F. ; Karouta, F. ; Jagadish, C. ; Tan, H.H.

Author_Institution

Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands

fYear

1999

fDate

28-28 May 1999

Firstpage

487

Abstract

Summary form only given. High optical power from diode lasers can be obtained using low confinement structures. An asymmetric design makes this requirement easier and avoids the limitations related to the confinement layers thickness. Results of CW measurements on diode lasers having a new low loss, low confinement InGaAs/AlGaAs DQW asymmetric structure with "optical trap layer", grown by MOVPE are presented.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; CW measurements; InGaAs-AlGaAs; MOVPE growth; asymmetric design; confinement layers thickness; continuous wave operation; high optical power; low confinement asymmetric structure diode lasers; low confinement structures; low loss low confinement InGaAs/AlGaAs DQW asymmetric structure; optical trap layer; semiconductor; Absorption; Charge carrier processes; Communications technology; Diode lasers; Optical losses; Optical waveguides; Power generation; Power lasers; Voltage; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834485

Filename

834485