A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs

Author

Goel, Nishith ; Mukhopadhyay, Saibal ; Nanaware, N. ; De, Suvranu ; Pandey, Rajan K. ; Murali, Kota V. R. M. ; Mahapatra, Santanu

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India

fYear

2014

fDate

1-5 June 2014

Abstract

DC and AC NBTI in deep EOT scaled HKMG p-MOSFETs with different IL (scaled to sub 2Å) are measured by UF-MSM method with 10μs delay. A model with interface trap generation (ΔV_IT-IL) at Si/IL interface, hole trapping (ΔV_HT) in IL bulk and trap generation (ΔV_IT-HK) linked to H passivated Oxygen vacancy (Ov-H) defects in IL/HK interfacial transition layer has been proposed. The existence of Ov defects and their energy levels are verified using DFT simulation. The model can successfully predict V_T shift (ΔV_T) during and after DC stress, dependence on pulse duty cycle (PDC) and frequency (f) for AC stress, and gate insulator process dependence with consistent set of parameters. Impact of EOT scaling on DC and AC NBTI is studied, and end-of-life degradation has been estimated.

Keywords

MOSFET; density functional theory; elemental semiconductors; high-k dielectric thin films; hole traps; negative bias temperature instability; semiconductor device models; semiconductor device reliability; silicon; vacancies (crystal); AC stress; DC stress; DFT simulation; H passivated oxygen vacancy defects; IL bulk generation; IL-HK interfacial transition layer; Ov-H defects; PDC; Si; UF-MSM method; comprehensive DC-AC model; deep EOT scaled HKMG p-MOSFETs; end-of-life degradation; energy levels; gate insulator process dependence; hole trapping; interface trap generation; negative bias temperature instability; pulse duty cycle; time 10 mus; ultra-fast NBTI method; ultra-fast measure-stress-measure method; Charge carrier processes; Delays; Logic gates; Silicon; Stress; Stress measurement; DCIV measurement; DFT simulation; Flicker noise measurement; HKMG; NBTI; Oxygen vacancy; Reaction-Diffusion model; Ultrafast-MSM; hole trapping; interface trap generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6861100

Filename

6861100