Title :
Double-gated silicon field emission arrays: fabrication and characterization
Author :
Chen, L.-Y. ; Akinwande, A.I.
Author_Institution :
Microsystems Technol. Lab., MIT, MA, USA
Abstract :
In this work, the gate field factor and focus field factor were examined in the double-gated field emission array (FEA) and were shown to have strong influence on the initial beam spread. The optical measurement verified that the device with the tip below the gate aperture provides a small beam spread.
Keywords :
electron beam focusing; electron field emission; elemental semiconductors; silicon; FEA; Si; beam spread; double-gated silicon field emission arrays; focus field factor; gate field factor; Anodes; Apertures; Collimators; Electron emission; Fabrication; Field emitter arrays; Focusing; Optical arrays; Silicon; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2004. IVNC 2004. Technical Digest of the 17th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2004.1354971
