• DocumentCode
    1875617
  • Title

    Damping in 1 GHz laterally-vibrating composite piezoelectric resonators

  • Author

    Segovia-Fernandez, Jeronimo ; Piazza, Gianluca

  • Author_Institution
    Carnegie Mellon Univ., Pittsburgh, PA, USA
  • fYear
    2015
  • fDate
    18-22 Jan. 2015
  • Firstpage
    1000
  • Lastpage
    1003
  • Abstract
    This paper focuses on experimentally verifying the physics of damping in 1 GHz laterally-vibrating composite piezoelectric resonators. This work confutes a previously developed theory of interfacial dissipation, a slip phenomenon occurring at the interface between dissimilar materials, which associated damping to a stress jump (or difference in Young´s moduli (ΔE)) of the materials forming the interface. This work finds that damping in 1 GHz laterally-vibrating AlN resonators could be attributed to either interfacial dissipation due to an acoustic velocity jump (Δv) or thermoelastic dissipation (TED) in the electrodes.
  • Keywords
    aluminium compounds; crystal resonators; electrodes; AlN; Young´s moduli; acoustic velocity jump; electrodes; frequency 1 GHz; interfacial dissipation; laterally-vibrating composite piezoelectric resonators; stress jump; thermoelastic dissipation; Acoustics; Damping; Electrodes; III-V semiconductor materials; Metals; Micromechanical devices; Resonant frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
  • Conference_Location
    Estoril
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2015.7051130
  • Filename
    7051130