DocumentCode
1875617
Title
Damping in 1 GHz laterally-vibrating composite piezoelectric resonators
Author
Segovia-Fernandez, Jeronimo ; Piazza, Gianluca
Author_Institution
Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2015
fDate
18-22 Jan. 2015
Firstpage
1000
Lastpage
1003
Abstract
This paper focuses on experimentally verifying the physics of damping in 1 GHz laterally-vibrating composite piezoelectric resonators. This work confutes a previously developed theory of interfacial dissipation, a slip phenomenon occurring at the interface between dissimilar materials, which associated damping to a stress jump (or difference in Young´s moduli (ΔE)) of the materials forming the interface. This work finds that damping in 1 GHz laterally-vibrating AlN resonators could be attributed to either interfacial dissipation due to an acoustic velocity jump (Δv) or thermoelastic dissipation (TED) in the electrodes.
Keywords
aluminium compounds; crystal resonators; electrodes; AlN; Young´s moduli; acoustic velocity jump; electrodes; frequency 1 GHz; interfacial dissipation; laterally-vibrating composite piezoelectric resonators; stress jump; thermoelastic dissipation; Acoustics; Damping; Electrodes; III-V semiconductor materials; Metals; Micromechanical devices; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2015 28th IEEE International Conference on
Conference_Location
Estoril
Type
conf
DOI
10.1109/MEMSYS.2015.7051130
Filename
7051130
Link To Document