Title :
Bias temperature instability variation on SiON/Poly, HK/MG and trigate architectures
Author :
Prasad, C. ; Agostinelli, M. ; Hicks, J. ; Ramey, S. ; Auth, C. ; Mistry, Khyati ; Natarajan, Sriraam ; Packan, P. ; Post, I. ; Bodapati, S. ; Giles, Mike ; Gupta, Swastik ; Mudanai, S. ; Kuhn, Kelin
Author_Institution :
Logic Technol. Dev. Quality & Reliability, Intel Corp., Hillsboro, OR, USA
Abstract :
A summary of NBTI variation is reported on large data-sets across five generations of Intel technologies (90 nm to 22 nm) and a comparison of statistical frameworks is utilized to show the universality of variation metrics across generations. Large volumes of data and modeling are emphasized as critical to enable accurate simulations of NBTI in extreme tails.
Keywords :
MOSFET; negative bias temperature instability; oxygen compounds; silicon compounds; statistical analysis; HK-MG architectures; Intel technologies; MOSFET; NBTI variation; SiON; bias temperature instability variation; large data-sets; statistical frameworks; trigate architectures; variation metrics; Data models; Degradation; MOSFET; Stress; Tin;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6861101
