Title :
Back-End-Of-Line Poly-Sige Disk Resonators
Author :
Quévy, Emmanuel P. ; Paulo, Alvaro San ; Basol, Erol ; Howe, Roger T. ; King, Tsu-Jae ; Bokor, Jeffrey
Author_Institution :
Berkeley Sensor and Actuator Center, EECS Dept., University of California
Abstract :
This paper reports the characterization of poly-silicon-germanium disk resonators at frequencies ranging from 35 to 425MHz. The back-end-of-line process technology is based on Spacer definition of sub-100nm lateral gaps, and uses Aluminum as interconnect material for compatibility with advanced CMOS backend. Reported data are organized around transmission, temperature and stability characteristics, as well as scanning-AFM imaging of the radial vibration modes.
Keywords :
Aluminum; CMOS technology; Electrodes; Frequency; Germanium silicon alloys; Micromechanical devices; Scanning electron microscopy; Silicon germanium; Space technology; Tin;
Conference_Titel :
Micro Electro Mechanical Systems, 2006. MEMS 2006 Istanbul. 19th IEEE International Conference on
Conference_Location :
Istanbul, Turkey
Print_ISBN :
0-7803-9475-5
DOI :
10.1109/MEMSYS.2006.1627779
