• DocumentCode
    187570
  • Title

    The impact of Hot Carrier Injection (HCI) on Voltage Control Oscillator lifetime prediction

  • Author

    Chih-Hsiang Ho ; Jenkins, Keith A. ; Ainspan, Herschel ; Ray, Emily ; Peilin Song

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    This paper presents a comprehensive study of the impact of Hot Carrier Injection (HCI) on differential LC Voltage Controlled Oscillator (VCO) reliability tests. Although Negative Bias Temperature Instability (NBTI) has been recognized as major cause for reliability degradation of advanced circuits, HCI-induced degradation may become significant due to the accelerated aging of reliability tests leading to incorrect circuit lifetime prediction. To distinguish HCI effects, different stress voltages and frequencies are applied in Constant Voltage Stress (CVS) and Ramp Voltage Stress (RVS) tests. It is verified that the stress voltage and frequency dependence of time and voltage exponents in the reliability tests are due to the effect of HCI. Based on the observed results, a methodology is proposed to define proper stress conditions for accelerated circuit reliability tests for better lifetime prediction.
  • Keywords
    circuit reliability; hot carriers; negative bias temperature instability; voltage-controlled oscillators; CVS tests; HCI-induced degradation; NBTI; RVS tests; accelerated circuit reliability tests; constant voltage stress tests; differential LC VCO; frequency dependence; hot carrier injection; negative bias temperature instability; ramp voltage stress tests; stress frequencies; time exponents; voltage control oscillator lifetime prediction; voltage exponents; Degradation; Frequency dependence; Human computer interaction; Integrated circuit reliability; Stress; Voltage measurement; CVS; Circuit lifetime; HCI; NBTI; RVS; Voltage Control Oscillator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6861105
  • Filename
    6861105